Gallium arsenide
Technology, Company Profiles, Process, Patent, Consultants, Application, Reports, Msds
Primary Information Services 
Home. Ordering Information. Contact

Information @ a Glance

Contents on the CD Rom

• Gallium arsenide (GaAs) is a compound of two elements, gallium and arsenic. It is an important semiconductor.
• GaAs has some electronic properties which are superior to those of silicon.
• It has a higher saturated electron velocity and higher electron mobility.
• The crystal growth using a horizontal zone furnace  where Ga and Arsenic vapour react and deposit on a seed crystal at the cooler end of the furnace.
• Gallium arsenide thin films were electrodeposited from acid aqueous solution on graphite substrates.
• X-ray diffraction patterns of the depositions showed a crystalline gallium arsenide thin films after annealing.
• Freshly deposited films are amorphous. After annealing polycrystalline GaAs and As are formed, as shown by X – ray diffraction measurements.
• Surfaces of GaAs ~001 were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction.
• Japanese manufacturers accounted for over 13% of the global GaAs device market in 2007.
• Mitsubishi Electric remained the largest Japanese supplier of GaAs and was joined by Eudyna Devices in the top ten.
• The largest European GaAs device manufacturer will be UMS moving forwards. UMS ranked 12th in 2007.
• The worldwide markets for Gallium Arsenide in US$ Million.
• The specific end-use segments discussed are Optoelectronics and Integrated Circuits.
• From 2009 to 2012, GaAs technology will be supplanted by CMOS and SiGe technologies for use in both long-range and short-range automotive radar systems, according Silicon Analytics.
• The potential importance of III-V compound semiconductors, the Wafer Technology Ltd focused its efforts on establishing manufacturing technologies for such materials and thereafter lead the way in being the first to offer production sources of gallium arsenide in various forms.
• GaAs wafers are fragile and brittle and, therefore, the well-developed dicing saw technique, which is widely used in the silicon industry, faces serious problems when used for dicing GaAs wafers.
• Using an epitaxial etch-refill techniitq iuse possible to obtain electrically isolated devices on a common semi-insulating GaAs substrate.
• The effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique.
• It is used to make devices such as microwave frequency integrated circuits, infrared light-emitting diodes, laser diodes and solar cells.
• Another advantage of GaAs is that it has a direct band gap, which means that it can be used to emit light efficiently.
• Due to its high switching speed, GaAs would seem to be ideal for computer applications.

Introduction

• Gallium Arsenide
• Gallium Arsenide
• Gallium Arsenide Products
• Gallium Arsenide
• Gallium Arsenide

Primary Information Services
 21 Murugappan St, SwamyNagar Ext2, 
Ullagaram, Chennai - 600091, India.
 Phone: 91 44 22421080  Email : informer@eth.net
Mobile numbers:9940043898, 9444008898  Fax : 91 44 22423753