Gallium arsenide
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  • Gallium arsenide (GaAs) is a compound of two elements, gallium and arsenic. It is an important semiconductor.
  • GaAs has some electronic properties which are superior to those of silicon.
  • It has a higher saturated electron velocity and higher electron mobility.
  • The crystal growth using a horizontal zone furnace  where Ga and Arsenic vapour react and deposit on a seed crystal at the cooler end of the furnace.
  • Gallium arsenide thin films were electrodeposited from acid aqueous solution on graphite substrates.
  • X-ray diffraction patterns of the depositions showed a crystalline gallium arsenide thin films after annealing.
  • Freshly deposited films are amorphous. After annealing polycrystalline GaAs and As are formed, as shown by X ray diffraction measurements.
  • Surfaces of GaAs ~001 were prepared by metalorganic vapor-phase epitaxy and characterized by scanning tunneling microscopy, x-ray photoelectron spectroscopy, infrared spectroscopy, and low-energy electron diffraction.
  • Japanese manufacturers accounted for over 13% of the global GaAs device market in 2007.
  • Mitsubishi Electric remained the largest Japanese supplier of GaAs and was joined by Eudyna Devices in the top ten.
  • The largest European GaAs device manufacturer will be UMS moving forwards. UMS ranked 12th in 2007.
  • The worldwide markets for Gallium Arsenide in US$ Million.
  • The specific end-use segments discussed are Optoelectronics and Integrated Circuits.
  • From 2009 to 2012, GaAs technology will be supplanted by CMOS and SiGe technologies for use in both long-range and short-range automotive radar systems, according Silicon Analytics.
  • The potential importance of III-V compound semiconductors, the Wafer Technology Ltd focused its efforts on establishing manufacturing technologies for such materials and thereafter lead the way in being the first to offer production sources of gallium arsenide in various forms.
  • GaAs wafers are fragile and brittle and, therefore, the well-developed dicing saw technique, which is widely used in the silicon industry, faces serious problems when used for dicing GaAs wafers.
  • Using an epitaxial etch-refill techniitq iuse possible to obtain electrically isolated devices on a common semi-insulating GaAs substrate.
  • The effect of the hydrogen intentional incorporation on the structural properties of the amorphous gallium arsenide prepared by rf-magnetron sputtering technique.
  • It is used to make devices such as microwave frequency integrated circuits, infrared light-emitting diodes, laser diodes and solar cells.
  • Another advantage of GaAs is that it has a direct band gap, which means that it can be used to emit light efficiently.
  • Due to its high switching speed, GaAs would seem to be ideal for computer applications.


  • Gallium Arsenide
  • Gallium Arsenide
  • Gallium Arsenide Products
  • Gallium Arsenide
  • Gallium Arsenide


  • Femtosecond laser ablation of gallium arsenide investigated with timeof- flight mass spectroscopy
  • Photo reflectance study on residual strain in heteroepitaxial gallium arsenide on silicon
  • Preparation of Gallium arsenide thin films from acid aqueous solution
  • Structure and compositionof  the c.434. reconstruction formed during gallium arsenide metalorganic vapor-phase epitaxy
  • Tunable terahertz generation in quasi phase matched gallium arsenide
  • Cost - Effective Yield Enhancement in 6-inch Gallium Arsenide Wafer Manufacturing


  • Alloy of silicon and gallium arsenide.
  • Process for oxidizing semi conducting compounds, especially gallium arsenide
  • Gallium arsenide depletion made MESFIT logic cell
  • Gallium arsenide semiconductor devices fabricated with insulator layer
  • Gallium arsenide field effect structure
  • High frequency gallium arsenide MMIC die coating method


  • Gallium Arsenide
  • Gallium Arsenide
  • Gallium Arsenide
  • Gallium arsenide
  • Gallium arsenide


  • Skyworks and TriQuint Steer Gallium Arsenide Industry Growth
  • Nanotechnology Network
  • Sumitomo Electric GaAs Wafer Plant
  • Wafer Technology Ltd Report
  • Spatially Resolved Spin-Injection Probability for Gallium Arsenide


  • Trends and Opportunities for Gallium Arsenide Semiconductors in Handsets
  • The Important Semiconductor Gallium Arsenide Is Analysed On a Global Market
  • Silicon set to displace gallium arsenide in automotive radar
  • Silicon set to displace gallium arsenide in automotive radar

Raw Material Suppliers

  • Arsenic Tri chloride Suppliers
  • Arsine Suppliers
  • Gallium Metal Manufacturers
  • Gallium Metal Suppliers


  • Suppliers Of Gallium Arsenide
  • Exporters of Gallium Arsenide

Turn key Providers

  • Turn Key Providers From Germany
  • Turn Key Providers From USA


  • Physics and application of surface acoustic waves on various structures of gallium arsenide
  • Role of Gallium Arsenide Laser Irradiation at 890 nm as an Adjunctive to Anti-tuberculosis
  • Toxicology of Gallium Arsenide: An Appraisal
  • Gallium arsenide photodetectors for imaging in the far ultraviolet region
  • Photovoltaic Materials Gallium Arsenide


  • Gallium arsenide differentially affects processing of phagolysosomal targeted antigen by macrophages
  • Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes
  • Gallium Arsenide Modulates Proteolytic Cathepsin Activities and Antigen Processing by Macrophages1
  • Position sensivity in gallium arsenide radiation detectors


  • 20W Array Laser Diode
  • Gallium Arsenide CATV Amplifier Module
  • Gallium Arsenide GH Series
  • CMM-2-BD 2.0 to 10.0 GHz GaAs MMIC Amplifier
  • GaAs Ired & Photo-Triac
  • Gallium arsenide


  • Consultant From Canada
  • Consultant From California
  • Consultant From Finland
  • Consultant From Sweden
  • Consultant From USA
  • Gallium Arsenide Experts


  • Dicing of Gallium Arsenide (GaAs) Wafers with the Laser Micro Jet Challenges, Improvements and Safety Issues
  • Efficacy of 904 nm Gallium Arsenide Low Level Laser Therapy in the Management of Chronic Myofascial Pain in the Neck
  • Gallium arsenide application symposium
  • Gallium Arsenide Planar technology
  • Hydrogen Influence on Gallium Arsenide Thin Films Prepared by RF-Magnetron Sputtering Technique
  • Gallium Arsenide Integrated Circuits
  • Trace and ultra trace analysis of gallium arsenide by different mass spectrometric techniques


  • Gallium arsenide
  • Establishment of semiconductors manufacturing & R&D Unit
  • Reliable Wireless Data Acquisition and Control Techniques within Nuclear Hot Cell Facilities
  •  Project for gallium arsenic

Company Profiles

  • Company From California
  • Company From Germany
  • Company From Texas
  • Company From USA
  • Company From USA

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