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  • Silicon carbide (SiC) is a compound of silicon and carbon bonded together to form ceramics, but it also occurs in nature as the extremely rare mineral moissanite.
  • Due to the rarity of natural moissanite, silicon carbide is typically man-made.
  • SiC also has a very low coefficient of thermal expansion and experiences no phase transitions that would cause discontinuities in thermal expansion.
  • Silicon Carbide is the only chemical compound of carbon and silicon. It was originally produced by a high temperature electro-chemical reaction of sand and carbon
  • Silicon carbide is an excellent abrasive and has been produced and made into grinding wheels.
  • Silicon carbide is composed of tetrahedra of carbon and silicon atoms with strong bonds in the crystal lattice. This produces a very hard and strong material.
  • Silicon carbide is often used as a layer of the TRISO coating for the nuclear fuel elements of high temperature gas cooled reactors or very high temperature reactors such as the Pebble Bed Reactor.
  • Silicon carbide is used for producing ceramic membranes for industrial processes, yielding high fluxes due to the sintering process.
  • Silicon carbide fibers are used to measure gas temperatures in a diagnostic technique called thin filament pyrometry.
  • Silicon carbide is used for blue LEDs, ultrafast, high-voltage Schottky diodes, MOSFETs and high temperature thyristors for high-power switching.
  • Silicon carbide (SiC) is manufactured in a resistance arc furnace charged with a mixture of approximately 60 percent silica sand and 40 percent finely ground petroleum coke.
  • A small amount of sawdust is added to the mix to increase its porosity so that the carbon monoxide gas formed during the process can escape freely. Common salt is added to the mix to promote the carbon-silicon reaction and to remove impurities in the sand and coke.
  • During the heating period, the furnace core reaches approximately 2200C (4000F), at which point a large portion of the load crystallizes.
  • At the end of the run, the furnace contains a core of loosely knit silicon carbide crystals surrounded by unreacted or partially reacted raw materials. The silicon carbide crystals are removed to begin processing into abrasive grains.
  • U.S. silicon carbide production increased about 10% during 2004 to an estimated 35,000 tons, and the value of production increased about 28% to an estimated $21.5 million.
  • The U.S. imported crude silicon carbide from eight countries and imported ground and refined silicon carbide from 21 countries.
  • Imports of crude silicon carbide increased by 18% during the year to 163,000 tons valued at $69.3 million.Imports of silicon carbide in ground or refined form increased 49% to 45,300 tons valued at $49.9 million.
  • China accounted for 57% of the crude silicon carbide imports and 36% of the ground and refined silicon carbide.
  • Silicon carbide
  • Silicon carbide & Its Properties
  • Irradiation Effects On The Mechanical Properties Of Silicon carbide
  • General Properties of Silicon Carbide


  • Aluminum Silicon Carbide (AlSiC) Waveguide Substrate for Commercial Communications Application
  • ultrasictm direct sintered and puresictm cvd silicon carbide for optical applications
  • Application of Silicon Carbide Semiconductors in Hybrid Electric Vehicles
  • Silicon Carbide Applications
  • Silicon Carbide Semiconductors for Space Applications
  • Influence of Silicon Carbide Structure on Running Capabilities of Hard-Hard Pairings in Marginally Lubricated Conditions
  • Silicon Carbide Ultraviolet Flame Detectors In Gas Turbine Engines
  • Silicon-Carbide (Sic) Semiconductor Power Electronics for Extreme High-Temperature Environments

  • High-Yield Silicon Carbide Vertical Junction Field Effect Transistor Manufacturing for RF and Power Applications

  • Sintering of silicon carbide RSiC for diesel particulate filters and other applications


  • PECVD Silicon Carbide as a Chemically-Resistant Thin Film Packaging Technology for Microfabricated Antennas
  • Packaging Technology Developed for High-Temperature Silicon Carbide Microsystems
  • Silicon Carbide Technology For Submillimetre Space Based Telescopes
  • Silicon Carbide (SiC) Power Electronics
  • Application of MOS Technology to Silicon Carbide Devices
  • Silicon Carbide (SiC) Ceramic Thin Films
  • Web Growth of Silicon Carbide Surfaces
  • Silicon Carbide Processing Technology: Issues and Challenges
  • 600 C Logic Gates Using Silicon Carbide JFETs
  • Silicon Carbide (SiC) MESFET Reliability
  • Edge termination and resurf technology in Power silicon carbide devices


  • Growth of Cubic Silicon Carbide on Silicon Nano-Mesas
  • Silicon Carbide Recovery Plant
  • Silicon Carbide Heating Elements Molybdenum Disilicide Heating Elements
  • Deep RIE Process for Silicon Carbide Power Electronics and MEMS
  • Preparation Of SIC Pieces From Different Carbonnaceous Materials By Reactive Infiltration
  • Microwave synthesis of phase-pure, fine silicon carbide powder
  • Silicon Carbide Manufacturing
  • Silicon Carbide Induced Pneumoconiosis: A Microscopic and Biochemical Experimental Study
  • Rapid damage-free shaping of silicon carbide using Reactive Atom Plasma (RAP) processing
  • Structural and spectroscopic characterization of porous silicon carbide formed by Pt-assisted electroless chemical etching
  • Reaction Bonded silicon Carbide
  • p-Process Signature in a Unique presolar Silicon Carbide Grain
  • Stress analysis of Silicon Carbide Microelectromechanical System using Raman Spectroscopy
  • Structure and properties of Silicon Carbide fibers as function of their synthesis conditions
  • Surface Modification of Nanometre Silicon Carbide Powder with Polystyrene by Inductively Coupled Plasma
  • Microwave synthesis of phase-pure, fine silicon carbide powder


  • Silicon Carbide Manufacturers & Suppliers
  • Silicon Carbide Manufacturers & Suppliers
  • Silicon Carbide Manufacturers importers & Suppliers
  • Silicon Carbide Manufacturers & Suppliers
  • Silicon Carbide Manufacturers Exporters & Suppliers
  • Silicon Carbide Suppliers

  • Silicon Carbide Selling Leads

  • Exporters of Silicon Carbide
  • Silicone Carbide Manufacturers


  • Production Of Silicon Carbide In 2002
  • Production Of Silicon Carbide In 2003
  • Production Of Silicon Carbide In 2004
  • Production Of Silicon Carbide In 2005
  • Production Of Silicon Carbide In 2006

Commodity Report

  • Production Of Silicon Carbide In 2004
  • Production Of Silicon Carbide In 2005
  • Production Of Silicon Carbide In 2006
  • Production Of Silicon Carbide In 2007
  • Production Of Silicon Carbide In 2008


  • Design Of A Basic Angle Monitoring System In Silicon Carbide
  • Silicon Carbide Micro Devices For Combustion Gas Sensing Under Harsh Conditions
  • Sulfidation and Regeneration of Novel Metal Oxide-based Sorbents
  • Development Of A Commercial Process For The Production Of  Silicon Carbide
  • Nanoporous Silicon Carbide for Nanoelectromechanical
    Systems Applications
  • TMT Prototype Segment


  • Company In China
  • Company In China
  • Company in England
  • Company In China
  • Company In China
  • Company in India
  • Company In China


  • Consultant From United States
  • Consultant From India
  • Consultant From  United Kingdom
  • Consultant From New York


  • Silicon Carbide Heater
  • Silicon Carbide
  • Silicon carbide heating elements
  • Silicon Carbide Rod
  • TPSS Si-Impregnated Silicon Carbide
  • Class-E Silicon Carbide VHF Power Amplifier

  • Out of the Bag Solutions in LPCVD Applications

  • Kanthal Silicon Carbide

  • Silicon carbide epitaxial wafer


  • Silicon Carbide Market
  • Overview of the Silicon Carbide Market
  • Silicon Carbide Electronics
  • PowerSiC Silicon carbide devices for power electronics market
  • SiC Puts New Spin On Motor Drives
  • Silicon carbide diodes make solar
    power systems more efficient


  • Analysis of Microstructure of Silicon Carbide Fiber by Raman Spectroscopy
  • 6th European Conference on Silicon Carbide and Related Materials
  • Muonium Dynamic In Silicon Carbide
  • Report On Silicon Carbide
  • 2nd SiC User Forum Potential Of SiC In Power Electronic Applications
  • Silicon carbide set to boost sal

  • Characterization and Modeling of Silicon carbide Junc Hon Barrier

  • Microsemi to Gain Advanced Silicon Carbide Technology from Advanced Power Acquisition

  • Nordic VCs invest in Silicon Carbide technology spin-out Norstel AB

  • Short Term Effect of Silicon Carbide Whisker to the Rat Lung

  • Sensing the Extreme

  • Introduction to Silicon Carbide Microelectromechanical Systems

  • Nonvolatile Characteristics of SiC-Based Memories


  • Silicon Carbide Semiconductor Device With Heavily Doped Silicon Carbide Ohmic Contacts
  • Method Of Preparing Fibrous Silicon Carbide
  • Recovery Of Surface-Ready Silicon Carbide Substrates
  • Silicon Carbide Furnace
  • Method For The Preparation Of Silicon carbide Whiskers
  • Method For Growing A Silicon Carbide Single Crystal
  • Process For Making A Silicon Carbide Composition
  • Production process of silicon carbide short fibers
  • Production process of silicon carbide from organosilicon compounds
  • Conductive silicon carbide
  • Colored silicon carbide
  • Graphite loaded silicon carbide and methods for making


Material Safety Data Sheet

  • Silicon Carbide Abrasive Grain
  • Silicon Carbide Whiskers
  • Silicon Carbide Resinoid Bonded Cutting/Grinding Wheel
  • Black Silicon Carbide
  • Silicon Carbide
  • Silicon carbide powder
  • Silicon Carbide Wheels
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