- Trimethylgallium,
Ga(CH3)3, often abbreviated to TMG or TMGa, is the preferred
metal organic source of gallium for metal organic vapour phase
epitaxy (MOVPE) of gallium-containing compound semiconductors,
such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN,
AlGaInP, InGaP and AlInGaNP.
- TMG is a clear,
colorless, pyrophoric liquid.
- TMG is known to
react violently with water and other compounds that are capable
of providing labile and active hydrogen.
- Trimethylgallium
may be prepared by the reaction of dimethylzinc with gallium
trichloride.
- The less volatile
diethyl ether adduct can be prepared by using methylmagnesium
iodide in ether in place of dimethylzinc; the ether ligands may
be displaced with liquid ammonia as well.
- The material is
used in the production of LED lighting and semiconductors as a
metal organic chemical vapor deposition precursor.
- Trimethylgallium
(TMG) Ga(CH3)3 Gallium occurs in trace amounts in bauxite and
zinc ores. It seems that the most competitive base material for
the semiconductor production is gallium.
- Trimethyl-gallium
has approximately the consistency of water and is a colourless
fluid, which has a boiling point of 60 degree C, has an
explosion-like reaction with water, and flames up on its own
when reacting with air.
- GaN films were
grown on (0001) sapphire substrates in a temperature range of
500-950°C by exposing the substrates to
trimethylgallium (TMG) and NH3 one at a time.
- Trimethylgallium
(TMG) and trimethylindium (TMIn) were used as the Ga and In
precursors, and high-purity ammonia (NH3) gas was used as the
nitrogen source.
- Metal organic
chemical vapor deposition growth of GaN films using
trimethylgallium (TMGa) and triethylgallium (TEGa) sources
exhibited the different growth mechanisms and properties of GaN
films.
- Trimethylgallium
(TMGa) is the most widely used source for GaAs MOVPE. A room
temperature (20°C) V.P. of 182 torr makes it suitable for both
atmospheric and low pressure applications.
- In semiconductor
manufacturing, Trimethyl gallium (TMGa) is used in
OrganoMetallic Vapor Phase Epitaxy (MOCVD) for the deposition of
epitaxial GaAs or GaN layers.
- Undoped GaAs has
been successfully grown by chemical beam epitaxy (CBE) via
surface decomposition process using arsine (AsH3) and Trimethyl
gallium.
- High temperature
gas phase reactions between trimethyl gallium and ammonia were
studied by means of in situ mass spectroscopy in an isothermal
flow tube reactor.
- The most common
precursor for MOCVD of GaN are Trimethyl gallium and ammonia.
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General
Information & Process
- Trimethylgallium
general information
- Trimethyl gallium,
Trimethyl gallium etherate and trimethyl gallium ammine
- High temperature
adduct formation of trimethylgallium and ammonia
- Some insight in to
the nature of the surface chemical processes involved in the
movpe growth of GaAs from arsine and trimethyl or trimethyl
gallium
Functions
- Growth and
characterization of GaN films on (0001) sapphire substrates by
alternate supply of trimethylgallium and NH3
- Influence of
sapphire annealing in trimethylgallium
atmosphere on GaN epitaxy by MOCVD
- Ligand exchange
reactions in InGaAs metalorganic
vapor-phase epitaxy
- Structural and
Optical Properties of InGaN/GaN Single Quantum Well Grown via
MOCVD
- Synthesis and
purification of some main group organometallic precursors for
compound semiconductors
- Characteristics of
GaN grown by metalorganic chemical vapor deposition using
trimethylgallium and triethylgallium
Studies
- Comparative
studies of Si-doped n-type MOVPE GaAs on Ge and GaAs substrates
- Spectroscopic
studies of exchange and pyrolysis reactions in mixtures of
trimethylamine alane, trimethylgallane and triethylgallane
- A Systematic Study
on the Growth of GaAs Nanowires by Metal-Organic Chemical Vapor
Deposition
Patent
- Trimethylgallium,
a method for producing the same and a gallium nitride thin film
grown from the trimethyl gallium
- Method of making
P-type compound semiconductor employing trimethylgallium,
trimethylarsenic and arsine
- Synthesis of high
purity dimethylaluminum hydride
- Cleaning process
of harmful gas
- Method of
chemically vapor depositing a thin film of Gas
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Application
- Growth of Ga-doped
ZnO thin film prepared by MOCVD for TCO application
- Life Cycle
Assessment of Solid State Lighting Applications
- Validating gallium
nitride growth kinetics using a precursor delivery showerhead as
a novel chemical reactor
- Characterization
of gallium-containing zeolites for
catalytic applications
Products
- Trimethylgallium
SSG
- Production
Quantities of EpiPure™ TMGa
- Trimethylgallium
TMGa
- Trimethyl gallium
Material
Safety Data Sheet
- Trimethyl gallium
- Product Safety
Assessment - Trimethylgallium
- Trimethylgallium -
OMGA079
- TMG SSG (Trimethyl
gallium)
- Trimethyl gallium
Optograde
- Trimethyl gallium
msds
- MSDS for Trimethyl
gallium
Technology
- Electrochemical
technology
for the production of
Trimethyl-gallium
- Identification of
a Gallium-Containing Carbon Deposit
Produced by Decomposition of Trimethyl Gallium
- Identification of
Black Deposits Produced during the Hydride-OM VPE Growth of GaN
- New method of
MOVPE process design for the growth of FGM AlGaAs/GaAs
photodetectors
Report
- Gallium
- Implementation of
Process Simulation Tools and Temperature Control Methods
for High Yield MOCVD Growth
- Organometallic
Vapor Phase Epitaxy Technical Program
- In situ
mechanistic studies of MOCVD growth of semiconductors
Suppliers
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Suppliers
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Trimethyl gallium
- Trimethylgallium
Exporters
- Suppliers &
Manufacturers of Trimethylgallium
Raw
Material Suppliers
- Dimethylzinc
Suppliers
- Exporters of
Dimethylzinc
- Suppliers of
Methyl Magnesium Iodide
- Suppliers &
Manufacturers of gallium trichloride
- Selling Leads of
gallium trichloride
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